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APT100GN60B2G

IGBT, 600V Field Stop, 229A, 625W, T-Max

tk
ID Code:187652
Tootja:Microchip Technology
Hind km-ga : 13,8068 €
Hind km-ta : 11,4106 €
VAT:21 %
Kättesaadavus:soovi korral
Kokku varud:0 tk
Marking manufacturer: APT100GN60B2G
Central warehouse Zdice: 0 tk
Unit:: tk
!_prehled mnozstevnich slev_!
KogusHind km-taHind km-ga
1 + 11,4106 €13,8068 €
5 + 10,9357 €13,2321 €
10 + 10,4603 €12,6570 €
25 + 9,9846 €12,0813 €


Basic information:

Marking manufacturerAPT100GN60B2G 
Type of component:IGBT-Fieldstop 
KategorieIGBT Full Silicon 
Configuration:single (1T) 
Construction:1*IGBT 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSJah 
REACHEi 
Type of casing:THT 
Case:!_to-247ad_3_! 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:tk 
Weight:7.2 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)229 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)229 [A]
IF(AV) (Tc/Ta=100÷119°C)135 [A]
UCE (sat) (@25°C)1.45 [V]
Pmax with heatsink (TC=25°C)625 [W]
tr (Turn-on / rise time)65 [ns]
tf/tq (Turn-off / fall time)55 [ns]
Qg (Total Gate Charge)600 [nC]
Cin (Input Capacitance)6000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.21 [°C/W]
RM - Pitch pins5.45 [mm]
Number of Pins
D - Outer diameter 3.65 [mm]
W - Width 16 [mm]
L - Length 21 [mm]
H - Height [mm]
Rozměry/Velikost (LxWxH)TO-247 [mm]
Dimensions of outlets1,4 [mm]
Lv - Length of outlets19.8 [mm]

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