DIM1200ESM33-MH00
Fast IGBT Module 3300V/1200A Single Fast SiC Diodes
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| ID Code: | 185397 |
| Tootja: | Dynex Semiconductor |
| Hind: | soovi korral |
| VAT: | 21 % |
| Kättesaadavus: | soovi korral |
| Kokku varud: | 0 tk |
| Tootja märgistus: | DIM1200ESM33-MH00 |
| Keskne lao Zdice: | 0 tk |
| Välismälu (tarneaeg 5÷10 päeva): | 0 tk |
| Üksus:: | tk |
| !_prehled mnozstevnich slev_! | Kogus | Hind km-ta | Hind km-ga |
This uses our latest technology trench IGBT, optimised for fast switching, and a SiC diode.
Some of the system-level benefits are improved efficiency, reduced volume/ size and weight. New inverter/converter topologies can also be realised with these devices. SiC devices (MOSFETs, Schottky diodes) are still expensive and hybrid Si/Sic module strikes a perfect balance between performance and cost. The SiC Schottky almost completely eliminates the reverse recovery loss. As a result the Erec loss is minuscule in hybrid module. ln addition, for applications such as PWM
inverters that have a hard switched turn-on there is also a significant reduction in turn-on losses due the dramatic reduction in free wheel diode recovery current.
Some of the system-level benefits are improved efficiency, reduced volume/ size and weight. New inverter/converter topologies can also be realised with these devices. SiC devices (MOSFETs, Schottky diodes) are still expensive and hybrid Si/Sic module strikes a perfect balance between performance and cost. The SiC Schottky almost completely eliminates the reverse recovery loss. As a result the Erec loss is minuscule in hybrid module. ln addition, for applications such as PWM
inverters that have a hard switched turn-on there is also a significant reduction in turn-on losses due the dramatic reduction in free wheel diode recovery current.
Põhilised andmed:
| Tootja märgistus | DIM1200ESM33-MH00 |
| Type of casing: | MODUL |
| Juhtum: | MODUL - E |
| Kategorie | IGBT Hybrid SiC |
| Konfiguratsioon: | !_singl-e 3*(t+d)_! |
| Materjali tüüp: | !_sic hybrid_! |
| Material Base | ALSiC |
| RoHS | Jah |
| REACH | Ei |
| NOVINKA | A |
| RoHS1 | Ano |
Pakendite ja kaal:
| Üksus: | tk |
| Kaal: | 1400 [g] |
| Väike pakk (ühikute arv): | 2 |
Elektrofüüsikalised parameetrid:
| Udc (URRM, UCEO, Umax) | 3300 [V] |
| Idc max (Tc/Ta=25÷160°C) | 1200 [A] |
| IF(AV) (Tc/Ta=100÷119°C) | 1200 [A] |
| Uisol (@25°C/1min/50Hz) | 6000 [V] |
| UF (maximum forward voltage) | 2.3 [VDC] |
| UCE (sat) (@25°C) | 2.9 [V] |
| Pd -s chladičem (Tc=25°C) | 17900 [W] |
| Input Logic Level (Ugs level) | 20V |
| tr (Turn-on / rise time) | 360 [ns] |
| tf (turn-off=fall time) | 290 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.001 [MHz] |
| Qg (Total Gate Charge) | 13000 [nC] |
| Cin/CL Load Capacitance | 140000 pF |
Thermal ja mehaanilise parameetrid:
| Tmin (minimaalne töötemperatuur) | -40 [°C] |
| Tmax (maksimaalne töötemperatuur) | 150 [°C] |
| Rthjc1 IGBT | 0.007 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.03 [°C/W] |
| PIN dimensiooni | 0.00 [mm] |
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