This uses our latest technology trench IGBT, optimised for fast switching, and a SiC diode.
Some of the system-level benefits are improved efficiency, reduced volume/ size and weight. New inverter/converter topologies can also be realised with these devices. SiC devices (MOSFETs, Schottky diodes) are still expensive and hybrid Si/Sic module strikes a perfect balance between performance and cost. The SiC Schottky almost completely eliminates the reverse recovery loss. As a result the Erec loss is minuscule in hybrid module. ln addition, for applications such as PWM
inverters that have a hard switched turn-on there is also a significant reduction in turn-on losses due the dramatic reduction in free wheel diode recovery current.
Põhilised andmed:
Tootja märgistus | DIM1200ESM33-MH00 |
Type of casing: | MODUL |
Juhtum: | MODUL - E |
Kategorie | IGBT Hybrid SiC |
Konfiguratsioon: | !_singl-e 3*(t+d)_! |
Materjali tüüp: | !_sic hybrid_! |
Material Base | ALSiC |
RoHS | Jah |
REACH | Ei |
NOVINKA | A |
RoHS1 | Ano |
Pakendite ja kaal:
Üksus: | tk |
Kaal: | 1400 [g] |
Pakendi liik: | BOX |
Väike pakk (ühikute arv): | 2 |
Elektrofüüsikalised parameetrid:
Udc (URRM, UCEO, Umax) | 3300 [V] |
Idc max (Tc/Ta=25÷160°C) | 1200 [A] |
IF(AV) (Tc/Ta=100÷119°C) | 1200 [A] |
Uisol (@25°C/1min/50Hz) | 6000 [V] |
UF (maximum forward voltage) | 2.3 [VDC] |
UCE (sat) (@25°C) | 2.9 [V] |
Pd -s chladičem (Tc=25°C) | 17900 [W] |
Input Logic Level (Ugs level) | 20V |
tr (Turn-on / rise time) | 360 [ns] |
tf (turn-off=fall time) | 290 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.001 [MHz] |
Qg (Total Gate Charge) | 13000 [nC] |
Cin/CL Load Capacitance | 140000 pF |
Thermal ja mehaanilise parameetrid:
Tmin (minimaalne töötemperatuur) | -40 [°C] |
Tmax (maksimaalne töötemperatuur) | 150 [°C] |
Rthjc1 IGBT | 0.007 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.03 [°C/W] |
PIN dimensiooni | 0.00 [mm] |