High Speed IGBT 600V above 15kHz
Põhilised andmed:
Tootja märgistus | DAGNH200600 |
Type of casing: | !_mod_! |
Juhtum: | SEMITRANS-2 |
Konfiguratsioon: | !_half bridge_! |
RoHS | Jah |
REACH | !_ne_! |
NOVINKA | A |
Elektrilised parameetrid:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=25÷160°C) | 200 [A] |
Idc max (Tc/Ta=25°C) | 200 [A] |
Idc max (Tc/Ta=80÷89°C) | 100 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
UCE (sat) (@25°C) | 2.6 [V] |
Pd -s chladičem (Tc=25°C) | 780 [W] |
Input Logic Level (Ugs level) | 15V |
trr recovery time (If=Inom.,@25°C) | 220 [ns] |
tr (Turn-on / rise time) | 60 [ns] |
tf (turn-off=fall time) | 30 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.03 [MHz] |
Cin/CL Load Capacitance | 19000 pF |
Materjal, värv, disain:
Materjali tüüp: | Cu baasi |
Materjal: Korpus | !_si-silicon_! |
Thermal ja mehaanilise parameetrid:
Tmin (minimaalne töötemperatuur) | -40 [°C] |
Tmax (maksimaalne töötemperatuur) | 150 [°C] |
Rthjc1 IGBT | 0.18 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.5 [°C/W] |
Pakendite ja kaal:
Üksus: | tk |
Kaal: | 167.7 [g] |
Pakend: | 64 |