MOSFET 1200V Full SiC Low Stray Inductance Phase Leg SiC The following are the features of
. SiC Power MOSFET
. Very Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M5 power connectors
. Internal thermistor for temperature monitoring
. Aluminum nitride (AlN) substrate for improved thermal performance
Põhilised andmed:
Tootja märgistus | MSCSM120AM027CT6AG |
Type of casing: | MODUL |
Juhtum: | !_modul-t6li_! |
Kategorie | Full SiC (MOS+D) |
Osa tüübi: | !_n-mosfet_! |
Konfiguratsioon: | !_half bridge_! |
Materjali tüüp: | !_sic full_! |
Material Base | Cu |
RoHS | Jah |
REACH | Jah |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Pakendite ja kaal:
Üksus: | tk |
Kaal: | 350 [g] |
Pakendi liik: | BOX |
Väike pakk (ühikute arv): | 6 |
Elektrofüüsikalised parameetrid:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=25÷160°C) | 733 [A] |
Idc max (Tc/Ta=25°C) | 733 [A] |
Idc max (Tc/Ta=80÷89°C) | 584 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
IR (reverse current) | 1800 [µA] |
Pd -s chladičem (Tc=25°C) | 2970 [W] |
Input Logic Level (Ugs level) | 20V |
Rds(on) 10V (Ugs=10V) | 3.5 [mΩ] |
trr recovery time (If=Inom.,@25°C) | 90 [ns] |
tr (Turn-on / rise time) | 55 [ns] |
tf (turn-off=fall time) | 67 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
Qg (Total Gate Charge) | 2088 [nC] |
Cin/CL Load Capacitance | 27000 pF |
Thermal ja mehaanilise parameetrid:
Tmin (minimaalne töötemperatuur) | -40 [°C] |
Tmax (maksimaalne töötemperatuur) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.07 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
PIN dimensiooni | 0.00 [mm] |
Alternatiivid ja asendused
Alternatiivsed tooted 1: | MD400HFR120B3S |