MSCSM120AM03CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
| ID Code: | 185252 |
| Tootja: | Microsemi / Microchip Technology |
| Hind km-ga : | 1 532,5478 € |
| Hind km-ta : | 1 266,5684 € |
| VAT: | 21 % |
| Kättesaadavus: | soovi korral |
| Kokku varud: | 0 tk |
| Tootja märgistus: | MSCSM120AM03CT6LIAG |
| Keskne lao Zdice: | 0 tk |
| Välismälu (tarneaeg 5÷10 päeva): | 0 tk |
| Üksus:: | tk |
| !_prehled mnozstevnich slev_! | Kogus | Hind km-ta | Hind km-ga |
| 1 + | 1 266,5684 € | 1 532,5478 € |
| 3 + | 1 139,9153 € | 1 379,2975 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM03CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Põhilised andmed:
| Tootja märgistus | MSCSM120AM03CT6LIAG |
| Type of casing: | MODUL |
| Juhtum: | !_modul-t6li_! |
| Kategorie | Full SiC (MOS+D) |
| Osa tüübi: | !_n-mosfet_! |
| Konfiguratsioon: | !_half bridge_! |
| RoHS | Jah |
| REACH | Ei |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Elektrilised parameetrid:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 805 [A] |
| Idc max (Tc/Ta=25°C) | 805 [A] |
| Idc max (Tc/Ta=80÷89°C) | 640 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 1200 [µA] |
| Pd -s chladičem (Tc=25°C) | 3215 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 3.1 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
| Qg (Total Gate Charge) | 2320 [nC] |
| Cin/CL Load Capacitance | 30200 pF |
Materjal, värv, disain:
| Materjali tüüp: | !_sic full_! |
| Material Base | Cu |
Thermal ja mehaanilise parameetrid:
| Tmin (minimaalne töötemperatuur) | -40 [°C] |
| Tmax (maksimaalne töötemperatuur) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.047 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.126 [°C/W] |
Mõõdud:
| PIN dimensiooni | 0.00 [mm] |
Pakendite ja kaal:
| Üksus: | tk |
| Kaal: | 320 [g] |
| Pakend: | 6 |
!_souvisejici zbozi_! - MSCSM120AM03CT6LIAG
 |
I+SEMITRANS3- 62x106=005W-AL Thermally Conductive Pad for insulated Packages as SEMITRANS-3 and in size 62x106mm ID: 176035 Märgise tootja: F05-AL2-62x106mm
| Kokku varud: 922 Tootja: - |
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