MSCSM120AM042CD3AG
MOSFET 1200V Full SiC MOS + SiC Diode
| ID Code: | 185289 |
| Tootja: | Microsemi / Microchip Technology |
| Hind km-ga : | 1 205,6744 € |
| Hind km-ta : | 996,4251 € |
| VAT: | 21 % |
| Kättesaadavus: | soovi korral |
| Kokku varud: | 0 tk |
| Tootja märgistus: | MSCSM120AM042CD3AG |
| Üksus:: | tk |
| !_prehled mnozstevnich slev_! | Kogus | Hind km-ta | Hind km-ga |
| 1 + | 996,4251 € | 1 205,6744 € |
| 5 + | 954,9106 € | 1 155,4419 € |
| 10 + | 913,3961 € | 1 105,2093 € |
| 25 + | 871,8816 € | 1 054,9767 € |
MOSFET 1200V Full SiC Low Stray Inductance Phase Leg SiC The following are the features of
. SiC Power MOSFET
. Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
. SiC Power MOSFET
. Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
Põhilised andmed:
| Tootja märgistus | MSCSM120AM042CD3AG |
| Type of casing: | MODUL |
| Juhtum: | SEMITRANS-3 |
| Kategorie | Full SiC (MOS+D) |
| Osa tüübi: | !_n-mosfet_! |
| Konfiguratsioon: | !_half bridge_! |
| Materjali tüüp: | !_sic full_! |
| Material Base | Cu |
| RoHS | Jah |
| REACH | Jah |
| NOVINKA | N |
| RoHS1 | Ano |
| UL94 | V-0 |
Pakendite ja kaal:
| Üksus: | tk |
| Kaal: | 350 [g] |
| Pakendi liik: | BOX |
| Väike pakk (ühikute arv): | 6 |
Elektrofüüsikalised parameetrid:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 495 [A] |
| Idc max (Tc/Ta=25°C) | 495 [A] |
| Idc max (Tc/Ta=80÷89°C) | 395 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 12 [µA] |
| Pd -s chladičem (Tc=25°C) | 2031 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 5.2 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
| Qg (Total Gate Charge) | 1392 [nC] |
| Cin/CL Load Capacitance | 18100 pF |
Thermal ja mehaanilise parameetrid:
| Tmin (minimaalne töötemperatuur) | -40 [°C] |
| Tmax (maksimaalne töötemperatuur) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.074 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
| PIN dimensiooni | 0.00 [mm] |
Alternatiivid ja asendused
| Alternatiiv 1: | 176372 - CAS300M12BM2 (WO) |
| Alternatiiv 2: | 174576 - SKM350MB120SCH17 (SMK) |
| Alternatiivsed tooted 1: | MD400HFR120C2S |
| Alternatiivsed tooted 2: | FF3MR12KM1 |
!_souvisejici zbozi_! - MSCSM120AM042CD3AG
 |
I+SEMITRANS3- 62x106=005W-AL Thermally Conductive Pad for insulated Packages as SEMITRANS-3 and in size 62x106mm ID: 176035 Märgise tootja: F05-AL2-62x106mm
| Kokku varud: 761 Tootja: - |
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